Abstract
Semipolar InGaN-made green light-emitting diodes (LEDs) have sparked tremendous interest within the photonics community in recent past as advantageous replacements for already operable polar (0001)-oriented LEDs due to reduction in efficiency droop and related green gap phenomenon. Nevertheless, any theoretical investigation in order to compare internal quantum efficiency (IQE); output power and 3 dB bandwidth (BW) within non-c-plane-oriented InGaN green LEDs is innately unavailable. This study intends to describe the consequence of strain-induced polarization field on aforesaid major optical and electronic characteristics of In0.29Ga0.71N/GaN green LED along semipolar (101̅2), (112̅2), (101̅1), (202̅1), (303̅1̅), (202̅1̅) and (101̅1̅) crystal orientations by introducing modified ABC model which involves the contribution from phase-space filling (PSF) and carrier drift leakage. Our numerical investigation illustrates that best IQE, droop ratio, light emission spectra, output power and I-V profile can be obtained from (112̅2)-oriented InGaN green LED due to inconsiderable appearance of intrinsic plus lattice-mismatch induced piezoelectric polarization charge. 3 dB BW and differential carrier lifetime (DLT) is also shown to be superior for this green LED structure. In addition with these, the evidence noticed from verification of external quantum efficiency (EQE) with previous experimental reports on semipolar (112̅2) InGaN green LEDs indicates reasonable accuracy of our theoretical approach.
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