Abstract
We report the thermal and electrical bistable characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE) (72∕28mol%)] thin films as a function of varying memory device architectures. Rectangular-shaped capacitance-voltage (C-V) hysteresis loops obtained using 100nm P(VDF-TrFE) films with a metal-ferroelectric-insulator-semiconductor (MFIS) diode architecture were more suitable for distinguishing the data-bit state compared with the symmetrical hysteresis observed using metal-ferroelectric-metal capacitors. Poly(4-vinyl phenol) used as a dielectric insulator in the MFIS prevented shifting of the C-V hysteresis curve toward the negative bias voltage.
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