Abstract
The basic characteristics of thermophotovoltaic heterostructure p-InAsSbP/n-InAs converters have been simulated. The converters have been designed so that a contact to the irradiated p-InAsSbP layer has a limited area or, in the flip-chip design, radiation is introduced through a contact-free part of the n+-InAs substrate. It has been shown that the design features of the converter influence its efficiency and active region temperature.
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