Abstract
The impedance source inverter reduces the number of stages of energy conversion due to its ability to increase the output voltage. Silicon based semiconductor power devices are commonly used for inverters, but as the voltage and current rating of the inverter increases with demand for high efficiency, the Silicon Carbide and Gallium Nitride power devices are most preferred. These wide bandgap devices enable the switches to be operated at high switching frequencies and with the increase in switching frequency, the size of the impedance network elements present in the inverter can be reduced. Thus, obtaining a compact and highly efficient inverter module. This paper presents a comparative analysis of Silicon, Silicon – Carbide and Gallium Nitride based quasi – impedance source inverters through simulation study. The performance of the inverters is analysed based on its efficiency, voltage stress and current stress across the switches and the results are validated.
Published Version
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