Comparative analysis of methods used for irradiated power MOSFET characterization

Abstract

Traditional methods to determine the radiation hardness of MOS structures require destructive testing. Electrical measurements represent an attractive, nondestructive way for determining the MOS transistor parameters and for understanding the mechanisms that lead to both buildup and the annealing of radiation-induced defects. Our idea was to compare commonly used I-V methods and CP (charge pumping) techniques with split C-V techniques for characterization of power MOSFETs to show advantages and drawbacks of these methods on a wide sample of conventional transistors manufactured in different technologies produced by different manufacturers.