Abstract
The article presents a comparative study on the performance of a ferroelectric quad-FinFET (Fe-QFinFET) with and without the implementation of Si3N4 spacer for different temperature variations by integrating the temperature-dependent Landau-coefficients into the 3D TCAD simulator. The drain current enhances in the subthreshold region while it decreases in the superthreshold region as the temperature is increased. The analog/RF parameters are enhanced at lower temperatures with the spacer dielectric. However, the Fe-QFinFET with spacer have incurred an expense in the form of a substantially high gate capacitance. A digital inverter is used to analyse the circuit performance of the Fe-QFinFET.
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