Comparative Analysis of Crosstalk Effects in Dielectric Inserted Horizontal andVertical Multi-layer GNR Interconnects for Ternary Logic System

Abstract

In this work, the performance of copper (Cu), dielectric inserted horizontal graphene nanoribbon (Di-HGNR) interconnect and dielectric inserted vertical graphene nanoribbon (Di-VGNR) interconnects are investigated using active shielding and passive shielding techniques. However, the analysis is carried out by adapting driver-interconnect-load system. This analysis considers the interconnect length from 500 to 2000 μm for 10 nm technology node. Further, the crosstalk induced effects on various interconnect structures are examined. It is envisaged that Di-VGNR exhibits lowest propagation delay compared to Cu and Di-HGNR. Further, the in-phase and out-phase crosstalk delay among the coupled interconnect lines is determined. It is investigated that active shielded Di-VGNR has least crosstalk induced delay compared to other interconnect structures considered in this study. Therefore, Di-VGNR interconnects outperforms Cu and Di-HGNR and are best suited for future VLSI interconnects.