Abstract
Self-assembled GaInNAs/GaAsN single-layer quantum dot (QD) lasers, grown using solid sourcemolecular beam epitaxy, have been fabricated and characterized. A high output power of40.76 mW/facet was obtained from a GaInNAs QD laser with dimensions of50 × 700 µm2 at10 °C. Temperature-dependent measurements were carried out on the GaInNAs QDlasers of different cavity lengths. For comparison, temperature-dependentmeasurements were also performed on GaInNAs single quantum well (SQW)and triple QW (TQW) lasers. Unlike the relationship between cavity length andT0 in GaInNAs SQW/TQW lasers, longer-cavity GaInNAs QD lasers(50 × 1700 µm2) showeda lower T0 of 65.1 K, which is believed to be due to non-uniformity of the GaInNAs QD layer.Furthermore, compared to GaInNAs SQW lasers, a significant improvement in temperaturesensitivity was observed in the TQW GaInNAs lasers. This is attributed to a reduction inthe relative contribution of the Auger recombination current and suppression of heavy-holeleakage in the TQW laser structures.
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