Abstract
This paper presents a closed-form threshold-voltage model for short-channel partially-depleted (PD) SOI dynamic-threshold MOS (DTMOS) devices based on a quasi-two-dimensional (2-D) approach. As verified by experimental data and 2-D simulation results, this compact model provides an accurate prediction of the threshold-voltage behavior of the short-channel PD SOI DTMOS devices. Based on the analytical model, as verified by the 2-D simulation results, PD SOI DTMOS devices have less short-channel effects including DIBL-induced short-channel effects as compared to the devices without the DTMOS configuration.
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