Abstract

For highly reliable and compact communication of front-end modules, a miniaturized reflectionless band-pass filter, based on the GaAs integrated passive device (IPD) process, is proposed in this work. The stop-band signal absorption rate of the filter can reach more than 90% and greatly reduce the influence of electromagnetic interference for sensitive devices. First, a circuit topology of reflectionless filter is proposed. Then, the miniaturized reflectionless band-pass filter is designed and fabricated based on GaAs IPD process with a compact size of only 0.85 mm × 1.33 mm × 0.09 mm (0.011λ × 0.018λ × 0.001λ). The filter operates at frequency ranging from 3.3 GHz to 4.5 GHz for 5G communication, the insertion loss (S21) is less than 3 dB, the return loss in the passband (S11) is over 15 dB, the stopband return loss (S11) is over 10 dB, and the out-of-band suppression (S21) reached 19 dB. All the measured results are in good agreement with the simulated results. It shows great potential in the process of designing highly reliable and compact monolithic integrated wireless modules and wearable electronics.

Highlights

  • A filter, as an important component in the front-end modules of wireless communication equipment, selectively pass and filter the signals in the frequency spectrum according to the different working frequency bands

  • The filter is always added between the amplifier and analog-to-digital converter (ADC) for filtering processing, and the useless stopband signal, reflected by filter, may be resampled by the ADC, reducing the spurious free dynamic range (SFDR) of the ADC [5]

  • A circuit topology of reflectionless band-pass filter is proposed by using the method of transforming low-pass filter into band-pass filter

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Summary

Introduction

A filter, as an important component in the front-end modules of wireless communication equipment, selectively pass and filter the signals in the frequency spectrum according to the different working frequency bands. In a solid-state transmitter, the homomorphic power amplifier usually has poor suppression of harmonic waves, and the output of the amplifier contains a large number of second and third harmonic waves These harmonic waves in the stopband are reflected back to the power amplifier by the filter, which may affect the normal work of the power amplifier, or even cause the power amplifier to burn [8]. A highly reliable and compact reflectionless band-pass filter, based on the GaAs integrated passive device (IPD) process, is proposed. A circuit topology of a reflectionless filter is proposed and the miniaturized reflectionless band-pass filter is designed and fabricated, based on GaAs IPD process with compact size of only. It shows great potential in designing of highly reliable and compact monolithic integrated wireless modules and wearable electronics

Circuit Design and Fabrication Process
Structure
Results and Discussion
Conclusions
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