Abstract
a compact size 5G n77 band-pass filter (BPF) design fabricated with a Through Silicon Via (TSV) Integrated Passive Device (IPD) process is presented in this paper. Insertion loss ≤ 2.2 dB with ≥ 30dB attenuation at 2.7GHz, 5.18GHz, and ISM band is achieved in a standard 1608 baseline design plus TSV add-on. The proposed design provides >20dB wideband attenuation up to 10GHz with low package variation and added thermal via introduced by TSV process. Therefore, this Silicon IPD with TSV design can support low cost, compact dimension, high precision, and high power requirement of 5G filter. Model correlation is verified through on wafer measurement.
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