Abstract
In this Letter, a compact equation for calculating energy sub-bands inside III–V gate all around nanowire MOSFET is developed taking into consideration the penetration of the wave function into the gate oxide and the effective mass discontinuity at the semiconductor–oxide interface. The values of the sub-band energies result from solving Schrodinger's equation in cylindrical coordinates is expressed in Bessel functions. The authors use an approximation for Bessel functions with the introduction of one fitting parameter. The results show very good agreement with self-consistent Schrodinger–Poisson solver data.
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