Compact modeling of Schottky barrier field-effect transistors at deep cryogenic temperatures

Abstract

In this paper, a physics-based DC compact model for Schottky barrier field-effect transistors at deep cryogenic temperatures is presented. The model uses simplified tunneling equations at temperatures of ϑ≈0K in order to calculate the field emission injection current at the device’s Schottky barriers. Additionally, an empirical expression for including resonant tunneling effects is introduced. The compact model is also compared to and verified by measurements performed on ultra-thin body and buried oxide SOI Schottky barrier field-effect transistors and is able to capture the signature of resonant tunneling effects in the transfer characteristics.