Compact Modeling of Negative Capacitance Nanosheet FET including Quasi-Ballistic Transport

Abstract

In this paper, we propose a compact model for Negative Capacitance Nanosheet Field Effect Transistor (NC-NSFET) including quasi-ballistic transport for sub-7nm technology node. The model captures the electrical characteristics of NC-NSFET for different ferroelectric thicknesses. Further, it captures the reverse short channel effects of NCFET for different channel lengths with a single set of parameters. Using our physics-based model, we find that quasi ballistic transport exacerbates the capacitance matching in NCFET compared to drift-diffusion only case. We validate the compact model with TCAD results. The proposed compact model is computationally efficient and implemented in Verilog-A code to enable SPICE circuit simulations. Finally, we demonstrate this by applying our model for NC-NSFET based CMOS inverter and SRAM circuit implementations in SPICE.