Abstract
A compact multi-gate MOSFET model is developed for high-voltage applications. The model includes the short-channel effects specific for thin-film MOSFETs with highly resistive drain contact. The short-channel effects are drastically reduced by the drain-resistance effect, which is consistently modeled by considering the whole potential distribution along the device. The overlap length is an important device parameter, which influences on the device characteristics for high-voltage MOSFETs in general. Modeling of the related effects is realized self-consistently for the reported compact high-voltage multi-gate MOSFET model, based on the applied complete potential-distribution description. In particular, the modeling requirements for capturing the specific features of the capacitance response are explored in detail. It is further demonstrated that the developed model is applicable even for limiting the device-size requirements during the development of a multi-gate MOSFET generation.
Highlights
INTRODUCTIONThat high voltage and low voltage devices are integrated on the same chip
It is common nowadays, that high voltage and low voltage devices are integrated on the same chip
A compact multi-gate MOSFET model is developed for high-voltage applications
Summary
That high voltage and low voltage devices are integrated on the same chip. The drain-resistance effect allows an increase of the supported drain voltages, but limits the maximum drive current of the MOSFET In this investigation, our focus is given on the development of an extended compact model for MG-MOSFETs, using a Double-Gate MOSFET (DG-MOSFET) as the primarily studied device [1], [8]. The developed model is valid for low- and high-voltage applications, and must describe both the short-channel effects and the drain-resistance effects accurately For this purpose, a consideration of the whole potential distribution along the device is a prerequisite in our modeling approach. B. MODELING OF SHORT-CHANNEL EFFECTS Fig. 2a shows the simulated I − V characteristics of the studied high-voltage DG-MOSFET. The current flowing in the drain drift region
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