Abstract
Abstract The physics-based IGBT sub-circuit compact model which can successfully include the effects of the localized lifetime control (LLC) on device electrical performance has been described in this paper. The model of non-punch trough IGBTs with different locations of LLC region is developed and its accuracy is verified based on the agreement with the results of two-dimensional numerical simulations of LLC effects in IGBTs. The models have been implemented in SPICE for investigation of the total power losses in the single phase Pulse Width Modulated (PWM) inverters.
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