Abstract
A deterministic compact model of the parametric instability of elementary devices is further developed. The model addresses the device instability class that can be traced back to microscopic reactions obeying reversible first-order kinetics. It can describe the response to any periodic stimulus waveform and it is suitable for the implementation in commercial electronic circuit simulators (Eldo UDRM). The methodology is applied to model the negative-bias-temperature threshold voltage instability of a p-channel MOSFET. A simple circuital example is shown where the simulation of threshold voltage recovery is crucial for circuit design.
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