Abstract

A compact on-chip dual-band bandpass filter (BPF) at millimeter-wave frequencies is proposed in 0.15- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\mu }\text{m}$ </tex-math></inline-formula> GaAs technology. To understand the working mechanism of the BPF, an LC equivalent circuit model is presented and analyzed for position estimation of the transmission zeros and poles. For demonstration, an on-chip BPF example is fabricated and tested, whose simulation and measurement are in good agreement. There are two frequency bands at 60.2 and 79.7 GHz with bandwidths of 9% and 6.8%, respectively. The chip, excluding the feedings, is only 0.304 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times0.464$ </tex-math></inline-formula> mm.

Highlights

  • WITH the development of new generation multi-service wireless communication systems, millimeter-wave multi-band bandpass filters (BPFs) have attracted increasing attention recently

  • Various design methods for millimeter-wave BPFs have been presented including on-chip planar structures [1,2,3,4,5,6,7,8,9,10,11] and waveguide configurations [12,13,14], most of them are with only single band

  • In [2], we previously presented a single-band BPF using 0.15-μm GaAs technology

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Summary

INTRODUCTION

WITH the development of new generation multi-service wireless communication systems, millimeter-wave multi-band bandpass filters (BPFs) have attracted increasing attention recently. There has been little research on dual-band or even multi-band BPFs using semiconductor technology at millimeter-wave frequencies. The on-chip BPFs using SiGe, GaAs and CMOS with single frequency band [1,2,3,4,5,6,7,8] and dual-band [9,10,11] are readily useful due to the advantages of small sizes and ease of integration. In order to extend to the dual-band application using the same semiconductor manufacturing process, a millimeter-wave on-chip dual-band BPF is designed in this paper with two TZs and three TPs. The positions of TZs and TPs can be tuned, thereby controlling the center frequencies and bandwidths of the passbands. The fabricated filter possesses low insertion loss and compact size with dual-band frequency response

DESIGN OF ON-CHIP DUAL-BAND BPF
C3 C2 C1
ON-WAFER MEASUREMENTS
Findings
CONCLUSION
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