Abstract
The compact double-gate MOSFET model HiSIM-DG considering the volume inversion effects is developed solving the Poisson equation iteratively including bulk charge. The developed model reproduces the bias dependence of not only the surface but also the center potential of the silicon layer. The model proves accurate dependence of silicon layer thickness in comparison to the 2 dimensional device simulation results. It is observed that the volume inversion effect prevents devices from performance degradation for a reduction of device sizes.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.