Abstract
A compact charge model for Si gate-all-around n-type metal-oxide-semiconductor capacitors (nMOSCAPs) with cylindrical cross-sections including the quantum confinement effect is presented. The density-gradient equation with a penetrating boundary condition is integrated to consider the quantum confinement effect. From the integrated equation, an expression for the surface potential is derived, and a compact charge model is presented. To calculate the charge–voltage characteristics, parameter modeling for terms related to quantum correction is done. The results from the model for various radii show excellent agreement with numerical simulations.
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