Acceleration of semiconductor device simulation using compact charge model

Abstract

In this work, we propose a method to get an initial guess for the semiconductor device simulation with a compact charge model. By using the obtained initial guess, we can perform the device simulation directly at the target bias condition without a time-consuming bias ramping process. In order to verify our method, rectangular Gate-All-Around (GAA) metal–oxide–semiconductor field-effect transistors (MOSFETs) having a long channel length are considered. Results clearly show that the device simulation can be accelerated through our method.