Abstract
Compact low-loss polarization independent vertical coupling between a 1.55 microm InGaAsP bulk active waveguide and a passive waveguide based on bimodal interference is presented. Simulation results show low coupling loss (<0.1 dB) over coupler lengths more than 5 times shorter than using the adiabatic design. The concept avoids submicron photolithographic features and shows acceptable fabrication tolerances.
Highlights
The route forward for photonics is, just as it was for electronics, the integration of multifunctional and highly optimized devices in a single chip in order to realize high
Butt-joint regrowth [1], selective area growth [2], quantum well intermixing [3] and offset quantum wells [4] are complex and expensive technologies that result in high cost devices and/or low yields
We propose an approach for the monolithic integration of InGaAsP active and passive waveguides fully based on bimodal interference between the two supermodes supported by the vertical structure formed by the active waveguide and the passive waveguide
Summary
The route forward for photonics is, just as it was for electronics, the integration of multifunctional and highly optimized devices in a single chip in order to realize high. Et al [5] proposed the integrated twin-guide structure, where the active and passive functions are separated into two different vertically displaced waveguides, eliminating the need for material regrowth or any post-growth processing Both waveguides have to be phase matched to transfer power by resonant coupling of the two supermodes, and a compromise in the device performance has to be defined because the active and passive functionalities cannot be optimized separately. We propose an approach for the monolithic integration of InGaAsP active and passive waveguides fully based on bimodal interference between the two supermodes supported by the vertical structure formed by the active waveguide and the passive waveguide This concept provides higher performance than the devices proposed so far, over a considerably shorter length and without the need of sub-micron lithography.
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