Abstract
The present work aims to ameliorate the recently popular innovative gate engineering concept of continuously varying the mole fraction in a binary metal alloy gate electrode along the horizontal direction and realize a ternary metal alloy gate electrode. Based on this, a new ternary metal alloy (TMA) double-gate MOSFET has been proposed and a detailed two-dimensional analytical modeling has been presented to make an overall performance comparison of this proposed TMA double-gate MOSFET with that of its binary metal alloy gate counterpart in terms of surface potential, electric field, threshold voltage roll-off, drain-induced barrier lowering and current in order to establish the superiority of a ternary metal alloy gate electrode over its binary metal alloy equivalent. Analytical results have been compared with SILVACO ATLAS device simulator results to validate our present model.
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