Abstract
The combination of narrow band gaps and notable stabilities against photoelectrochemical corrosion brings copper vanadates into the forefront of emerging photoanodes. Herein, we report a feasible approach to fabricate β-Cu3V2O8 thin film with a porous structure directly on indium-doped tin oxide (ITO) substrate for photoelectrochemical water oxidation. The porous β-Cu3V2O8 photoanode exhibits a photocurrent density of 220 μA cm−2 at 1.55 V vs RHE (reversible hydrogen electrode) in pH 9.2 borate buffer electrolyte under simulated solar irradiation. The present work could provide a base for further development of porous β-Cu3V2O8 as a solar fuels photoanode.
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