Communication—Bottom-Up TSV Filling Using Sulfonated Diallyl Dimethyl Ammonium Bromide Copolymer as a Leveler

Abstract

A new leveler, sulfonated diallyl dimethyl ammonium bromide copolymer, exhibits the void-free through silicon via (TSV) bottom-up filling with 5 minutes. The leveler has been characterized by CVS measurements with different concentrations at different RDE rotation speeds. The results show that SDDABC assisted the formation of a strong inhibition layer on copper surface when 16 ppm concentration has been added. Furthermore, bottom-up TSV filling with nearly no deposit on TSV sidewall is achieved with 16 ppm of SDDABC. Also, the filling time of 20 × 45 μm TSV is only 5 minutes.