Common-base multi-finger submicron InGaAs/InP double heterojunction bipolar transistor with fmax of 305 GHz

Abstract

A layout of a common-base four-finger InGaAs/InP double heterostructure bipolar transistor (DHBT) has been designed and the corresponding DHBT has been fabricated successfully by using planarization technology. The area of each emitter finger was 1×15μm2. The breakdown voltage was more than 7V, the current could be more than 100mA. The maximum output power can be more than 80mW derived from the DC characteristics. The maximum oscillation frequency was as high as 305GHz at IC=50mA and VCB=1.5V. The DHBT is thus promising for the medium power amplifier and voltage controlled oscillator (VCO) applications at W band and higher frequencies.