Abstract
For the original article see ibid., vol.ED-34, no.8, p.1617-25, 1987. The commenters compare the nonlinear modulation-doped field-effect transistor (MODFET) model proposed by W.A. Hughes and C.M. Snowden with a simple charge-control model developed previously. They demonstrate that these models agree quite well and that the disagreement found by Hughes and Snowden was due to an additional assumption of the complete velocity saturation in the MODFET channel. In reply, Snowden agrees and develops the point further.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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