Comment on “Formation of nanocrystallites governed by the initial stress in the ultrathin hydrogenated amorphous silicon films” [J. Appl. Phys. 90, 1067 (2001)

Abstract

A recent article suggested that “paracrystalline” silicon could be detected in very thin hydrogenated amorphous silicon films by using spectroscopic ellipsometry. We show that the important features of the ellipsometry data can be reproduced using a simple optical model of amorphous Si:H, with no assumptions about unusual structures or thickness-dependent optical properties.