Abstract
Spectroscopic ellipsometry (SE) is utilized to measure optical, structural and chemical properties of advanced semiconductor materials. In the case of very thin metal films, the correlation between thickness dependent optical properties and the free electron relaxation time is traced to the change in grain size. Low‐κ dielectric materials were characterized to extract the chemical (molecular bond vibration and carbon content), porous (pore volume fraction and pore size), and mechanical (coefficient of thermal expansion and Young's modulus) properties. SE was also employed to measure the bandgap of high‐κ dielectric thin films and the glass transition temperature of EUV photoresists and under layers. The percentage of curing in adhesive bonding layers used in 3D interconnects and the stress in strain engineered III‐nitride thin films were measured via infrared SE. SE is also an excellent method of measuring thin Silicon on Insulator materials. The shift in transition energies of the critical points in extremely thin silicon‐on‐insulators (ETSOI) were measured using direct space analysis.
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