Abstract
The authors would like to comment on the choice of intrinsic point defect formation and migration energies in the above mentioned letter. The values that were used are extracted from experimentally observed defect formation and distribution in as-grown Si crystals and therefor already implicitly contain to some extent the impact of stress. It is shown that this "built-in" stress effect can be taken into account to some extent by fitting the experimental data using a stress dependent Voronkov criterion yielding a consistent estimate of the pre-factors of the exponential equations describing the diffusivity and thermal equilibrium concentration of the intrinsic point defects.
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