Abstract
MgSiN2 powders have been synthesized by combustion synthesis (CS) using Mg and Si3N4 as starting materials at different nitrogen pressures. The CSed powders were then sintered by spark plasma sintering (SPS) to obtain dense bulk MgSiN2 product. Analysis of the CSed powder using X-ray diffraction (XRD) revealed single-phase MgSiN2 was obtained by CS method. However, the CSed product can be divided into three distinct parts according to its color. Scanning electron microscopy (SEM) observation revealed the grain size and crystallinity decrease gradually from the center to the outer layer. Some small grains clustered together to form larger particles, and there were a large number of pores among the clusters. The grain size seemed increasing with the increase of nitrogen pressure. The bulk density of CS-SPSed MgSiN2 was 3.11 g/cm3, Vickers hardness was 1673.1 kgf/mm2, and thermal diffusivity was 8.718E−2 cm2/s.
Highlights
In recent years, magnesium silicon nitride (MgSiN2) has been attracted great interest due to the crystal structure is similar to aluminium nitride (AlN)
Analysis of the CSed powder using X-ray diffraction (XRD) revealed single-phase MgSiN2 was obtained by combustion synthesis (CS) method
Some small grains clustered together to form larger particles, and there were a large number of pores among the clusters
Summary
Magnesium silicon nitride (MgSiN2) has been attracted great interest due to the crystal structure is similar to aluminium nitride (AlN). Compared with AlN, MgSiN2 is a simple covalent insulator, and shows more excellent mechanical properties than AlN ceramics [1] [2] [3]. MgSiN2 has many attractive properties such as high thermal conductivity, low dielectric constant, high hardness, high thermal stability, good oxidation resistance (up to 920 ̊C) and high electrical resistance at room temperature [4] [5]. MgSiN2 has been successfully used as effective sintering additive of nitrogen ceramics or growth promoter of β-Si3N4 rod crystal [6] [7] [8] [9]. MgSiN2 is considered to be a promising luminescent material for light emitting diode (LED) applications [10] [11]
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