Abstract
Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and the inclusion of Landau fluctuations and production of secondary particles in the sensor are crucial ingredients for the understanding and reproduction of detector characteristics.In this paper, a CMOS pixel sensor with small collection electrode design, implemented in a high-resistivity epitaxial layer, is simulated by integrating a detailed electric field model from finite element TCAD into a Monte Carlo based simulation with the Allpix2 framework. The simulation results are compared to data recorded in test-beam measurements and very good agreement is found for various quantities such as cluster size, spatial resolution and efficiency. Furthermore, the observables are studied as a function of the intra-pixel incidence position to enable a detailed comparison with the detector behavior observed in data.The validation of such simulations is fundamental for modeling the detector response and for predicting the performance of future prototype designs. Moreover, visualization plots extracted from the charge carrier drift model of the framework can aid in understanding the charge propagation behavior in different regions of the sensor.
Highlights
Integrated monolithic CMOS technologies with small collection electrodes [1] are emerging technologies enabling advances in the design of next-generation high-performance silicon vertex and tracking detectors for high-energy physics
This paper presents a simulation performed with a combination of commonly used tools employed in silicon detector simulation
The ROOTObjectReader is used to read the information from the respective file and the final digitization step is performed. This allows to re-run this final section of the simulation on the full set of Monte Carlo events with different settings applied without the need to recompute the drift motions
Summary
Integrated monolithic CMOS technologies with small collection electrodes [1] are emerging technologies enabling advances in the design of next-generation high-performance silicon vertex and tracking detectors for high-energy physics. The Allpix framework [2] is used to combine TCAD-simulated electric fields with a Geant4 [3,4,5] simulation of the particle interaction with matter, to investigate the behavior of high-resistivity CMOS detectors and to compare the predicted performance with measurements recorded in a particle beam This allows direct access to detector performance parameters such as spatial resolution and detection efficiency by taking into account the stochastic nature of the initial energy deposition. While many of these properties could be investigated by advanced TCAD transient simulations, this approach is not practical owing to the high computing time for a single event and the high-statistics samples required to evaluate the effects related to the strong variation of the electric field in three dimensions.
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