Abstract
This study investigates the controlled electrochemical synthesis of porous silicon and germanium (Ge)-doped porous silicon using a 4:1 ratio of hydrofluoric acid (HF) to ethanol. Structural analysis performed with FESEM-EDX confirmed the presence of Ge in the samples. Analysis of the I-V characteristics demonstrated that increasing the bias voltage at the source led to a corresponding increase in the observed current. Additionally, effective X-ray measurements facilitated the assessment of X-ray irradiation effects on the sample detector. The experimental results indicated that the optimal conditions for the porous silicon (PS) and Ge-doped porous silicon (Ge-PS) samples were (90V, 100mA, 1s) and (100V, 10mA, 0.5s), respectively.
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