Abstract
The results of studies of the effect of technological modes of nanoscale silicon substrate surface profiling by local anodic oxidation (LAO). The effect of relative humidity and the amplitude of the voltage applied to the tip-substrate system with LAO on the geometric parameters of the oxide nanostructures (ONS) and profiled nanostructures (PNS). It has been shown that increasing the voltage amplitude to the probe substrate 10 to the system 20 causes an increase in the height of the ONS 0.6 ± 0.2 to 2.0 ± 0.3 nm at 70% relative humidity. Investigations of the possibility of using ONS as a mask during the silicon etching liquid. It has been shown that increasing the silicon etching time from 10 to 80 seconds in the KOH + IPA causes increased silicon PNS height of 100 ± 10 nm and 350 ± 30 nm. The results can be used in the development of technological processes of manufacturing of nanoelectronics components based on silicon base using the probe nanotechnologies.
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