Abstract
The combined reactor neutron beam and 60Co γ-ray radiation effects on complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have been discussed and some new experimental phenomena are presented. The samples are manufactured in the standard 0.35-μm CMOS technology. Two samples were first exposed to 60Co γ-rays up to the total ionizing dose (TID) level of 200 krad(Si) at the dose rates of 50.0 and 0.2 rad(Si)/s, and then exposed to neutron fluence up to 1 × 1011 n/cm2 (1-MeV equivalent neutron fluence). One sample was first exposed to neutron fluence up to 1 × 1011 n/cm2 (1-MeV equivalent neutron fluence), and then exposed to 60Co γ-rays up to the TID level of 200 krad(Si) at the dose rate of 0.2 rad(Si)/s. The mean dark signal (KD), the dark signal non-uniformity (DSNU), and the noise (VN) versus the total dose and neutron fluence has been investigated. The degradation mechanisms of CMOS APS image sensors have been analyzed, especially for the interaction induced by neutron displacement damage and TID damage.
Highlights
Complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have to survive in the harsh radiation environments for their applications such as particle detection, nuclear industry, medical imaging, and space remote sensors.[1,2,3] The radiation-induced damages can be separated into two phenomena: ionization damage effects and displacement damage effects.Total ionizing dose (TID) radiation can induce significant charge build-up in oxides and insulators leading to the performance degradation of a complementary metal-oxide semiconductor (CMOS) APS image sensor and even being functional failure
The test samples of NA01 and NA03 were first exposed to 60Co γ-rays up to the total ionizing dose (TID) level of 200 krad(Si) and secondly exposed to neutron fluence up to 1 × 1011 n/cm2(1-MeV equivalent neutron fluence)
The experimental results show that the dark signal non-uniformity (DSNU) increase induced by displacement damage is very remarkable and is larger than that induced by TID damage
Summary
Complementary metal-oxide semiconductor (CMOS) active pixel sensors (APS) have to survive in the harsh radiation environments for their applications such as particle detection, nuclear industry, medical imaging, and space remote sensors.[1,2,3] The radiation-induced damages can be separated into two phenomena: ionization damage effects and displacement damage effects. Total ionizing dose (TID) radiation can induce significant charge build-up in oxides and insulators leading to the performance degradation of a CMOS APS image sensor and even being functional failure. TID radiation effects on CMOS image sensors are one of the key issues of radiation damage. The research reported examines the combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors. The mean dark signal, the dark signal non-uniformity, and the noise versus the total doses and neutron fluence are presented to investigate the interaction of neutron displacement damage and TID damage in CMOS APS image sensors. The experimental results reported and discussed in this paper will provide a primary knowledge for understanding the combined reactor neutron beam and 60Co γ-ray radiation effects on CMOS APS image sensors
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