Abstract
Carbon-doped AlGaAs and AlInP doped with zinc or magnesium are compared as p-cladding material for laser diodes emitting around 633nm. Mg doping of Al(Ga)InP is linearly dependent on the Cp2Mg flow rate after a doping delay in which a sufficient Mg coverage of the surface is built up. Laser diodes with Mg and Zn doped cladding were fabricated, compared and analysed by secondary ion mass spectrometry. Combining a Zn-doped AlGaInP waveguide with a Mg-doped cladding layer reveals diffusion interaction between Mg and Zn and results in enhanced Mg back diffusion into the waveguide counteracting the Mg doping delay. Laser diodes emitting at the wavelength of 632nm with an output power of more than 1W per facet have been demonstrated using this dopant combination.
Published Version
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