Abstract
High resolution dense lines patterned by focused electron beam-induced deposition (FEBID) have been demonstrated to be promising for lithography. One of the challenges is the presence of interconnecting material, which is often carbonaceous, between the lines as a result of the Gaussian line profile. We demonstrate the use of focused electron beam-induced etching (FEBIE) as a scanning electron microscope (SEM)-based direct-write technique for the removal of this interconnecting material, which can be implemented without removing the sample from the SEM for post processing. Secondary electron (SE) imaging has been used to monitor the FEBIE process, and atomic force microscopy (AFM) measurements confirm the fabrication of well separated FEBID lines. We further demonstrate the application of this technique for removing interconnecting material in high resolution dense lines using backscattered electron (BSE) imaging to monitor the process.
Highlights
Introduction theFocused electron beam-induced deposition (FEBID) is a high resolution direct-write nanopatterning technique that can be implemented in a scanning electron microscope (SEM) by scanning the beam in the presence of adsorbed precursor molecules on the substrate
In comparison to focused electron beam-induced deposition (FEBID), focused electron beam-induced etching (FEBIE) is complicated by the fact that it is a two precursor system, with hydrocarbons being present in the chamber in addition to the water that has been let in
The partial pressure of these is lower than that of water, but the FEBID cross section resulting in the deposition of contamination is higher
Summary
Focused electron beam-induced deposition (FEBID) is a high resolution direct-write nanopatterning technique that can be implemented in a scanning electron microscope (SEM) by scanning the beam in the presence of adsorbed precursor molecules on the substrate. This work addresses the issue of interconnecting material in dense FEBID lines. As the scattering of the high energy electron beam in the substrate during FEBID results in the generation of backscattered electron (BSE)’s and SE2’s (secondary electrons generated by BSE’s) over a radius of several hundreds of nanometres, all of which have some probability of dissociating the adsorbed precursor molecules, a thin film of (often) carbonaceous material is deposited over this range. It is to be expected that in the patterning of dense FEBID lines, this would contribute to the deposition of material in between the patterned areas
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