Abstract

The combined influence of Rashba spin‐orbit interaction (SOI) strength and the length of SOI region, which can be controlled by the external gate voltage deposited on the heterostructure, on electron precession in quasi‐one‐dimensional quantum wires is studied by evaluating the relative conductance change. It is shown that for an appropriate quantum wire width, electron spin precession can be smoothly realized by co‐adjusting these two parameters.

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