Abstract
The effect of RTA treatment on the gate oxide reliability in the manner of as-grown and RTA-induced defect state was investigated. The RTA pre-treatment brings significant degradation of GOI yield, and the effect becomes severe as the v/G of a sample is increased. On the other hand, GOI yield was recovered when successive CMP processes was applied on the wafer after finishing the RTA process. In summary, void-rich layer with a thickness of few micrometers was formed in the wafer surface after the RTA treatment, and the density of void is clearly affected by the as-grown vacancy concentration.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
