Abstract
The effect of RTA treatment on the gate oxide reliability in the manner of as-grown and RTA-induced defect state was investigated. The RTA pre-treatment brings significant degradation of GOI yield, and the effect becomes severe as the v/G of a sample is increased. On the other hand, GOI yield was recovered when successive CMP processes was applied on the wafer after finishing the RTA process. In summary, void-rich layer with a thickness of few micrometers was formed in the wafer surface after the RTA treatment, and the density of void is clearly affected by the as-grown vacancy concentration.
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