Abstract
In this paper we present a GaAs surface passivation technique using (NH4)2Sx treatment and plasma-enhanced chemical vapour deposition silicon nitride. The passivation effects are demonstrated by the improvement in the capacitance–voltage (C–V) and the photoluminescence (PL) data. Post-metallization annealing (PMA) at 450 °C is required to obtain a good 1 MHz C–V curve and high band-edge PL intensities. Even though higher-temperature PMA shows better values of C–V and lower interface state density (Dit), it reduces the band-edge PL intensities. This is attributed to the hydrogen incorporation into GaAs during higher-temperature annealing cycles.
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