Abstract

Abstract The strained spherical quantum dot (QD) InAs/GaAs heterosystem has been considered. A single band model for electrons and a multiband model for holes have been applied. In both models the polarization charges which arise at the surfaces have been taken into account. Deformation of the QD and matrix has been regarded in the electron and hole spectra. For the InAs/GaAs heterosystem polarization and deformation effects change the electron and hole spectra in the opposite manner: polarization charges at the interfaces increase the energy, while deformation effects decrease it.

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