Effects of polarization charge on the photovoltaic properties of InGaN solar cells

Abstract

AbstractThe effects of interface polarization charge on the photovoltaic characteristics of GaN/InGaN solar cells have been analyzed in detail using 2D drift‐diffusion simulations. The polarization charge at the GaN/InGaN interface creates an electric field that forces carriers generated by light to drift in opposite direction needed for efficient collection and substantially reduces the short circuit current (Isc) and open circuit voltage (Voc). The polarization charge plays an important role in the photovoltaic properties of InGaN solar cells comparable to that of defects. For small interface charge, the potential barrier could increase the Voc.