Abstract
A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (µc-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of µc-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multihollow discharge plasma CVD method by which fluxes of H and SiH3 radicals and their flux ratio can be varied with the distance from the discharges. The higher gas pressure brings about the higher deposition rate, whereas the process window of device quality µc-Si:H films becomes quite narrower for the higher gas pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
