Abstract
Experimental results of the combination of transverse mode selection and active mode-locking with anti-reflection-coated broad area lasers (BALs) are presented. The BALs are subject to feedback from a free-space external Fourier-optical 4f-setup with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection. Driving the BALs with a high frequency modulated pump current above threshold active longitudinal mode-locking is achieved. Pulse durations as low as 88 ps are obtained, while the Gaussian-like fundamental or a higher order transverse mode up to mode number 5 is selected on purpose. Pulse duration and shape are nearly independent of the selected transverse mode.
Highlights
Semiconductor lasers are widely used in many of today’s photonic applications, due to their advantages like reliability, small size, the opportunity for electrical pumping, and an excellent efficiency
In this paper we present experimental results of active mode-locking of broad-area lasers (BALs) (anti-reflection- (AR-) coated on one facet) being subject to feedback from a free-space external Fourier-optical 4f -cavity with a reflective spatial frequency filter in the Fourier-plane for transverse mode selection (i.e., 2f plus the way back after reflection from a reflective spatial filter)
Active mode-locking is achieved by pump current modulation here
Summary
Semiconductor lasers are widely used in many of today’s photonic applications, due to their advantages like reliability, small size, the opportunity for electrical pumping, and an excellent efficiency. Pulse widths in the picosecond range are reported by many groups investigating active or passive mode-locking of external cavity narrow stripe laser diodes [17,18,19,20].
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