Abstract
Thick GaN films with high quality are directly grown on sapphire in ahome-built vertical hydride vapour phase epitaxy (HVPE) reactor. Theoptical and structural properties of large scale columnar domains nearthe interface are studied using cathodoluminescence and micro-Ramanscattering. These columnar domains show a strong emission intensity dueto extremely high free carrier concentration up to 2×1019 cm−3, which are related with impurities trapped instructural defects. The compressive stress in GaN film clearlydecreases with increasing distance from interface. The quasi-continuouscolumnar domains play an important role in the stress relaxation forthe upper high quality layer.
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