Abstract
ABSTRACT Colossal permittivity (CP) materials are potential for the important applications of device miniaturization and energy storage. In this work, (Zn2+ 1/3Ta5+ 2/3)xTi1-xO2 ceramics were fabricated by conventional solid-state method. Large dielectric permittivity (>104) and low tanδ (<0.06) have been attained. This dielectric property shows a high stability in wide temperature (30–200°C) and frequency (20–106 Hz) range. The crystalline structure, microstructure and dielectric properties of ZTTO ceramics were systematically investigated. XPS reveals the formation of electron-pinned defect-dipoles (EPDD) model. In addition, combined with impedance spectroscopy and frequency dependent dielectric constant under DC bias results reveal that colossal permittivity are mainly caused by EPDD model, internal barrier layer capacitance (IBLC) effect, and electrode effect. This work would provide guidance to further researching the colossal permittivity materials.
Highlights
With the continued development of microelectronics information technology, the colossal permittivity (CP) materials have received unprecedented attention[1,2,3]
A series of emerging CP materials have been prepared and further modified to achieve high CP for practical applications including BaTiO3, CaCu3Ti4O12 (CCTO),La2-xSrxNiO4, NiO, and (Pb, La)TiO3 [4,5,6,7,8,9,10]. The discovery of these new materials has greatly promoted the experimental research and related theoretical development of giant dielectric materials, the comprehensive dielectric properties of these systems cannot meet the requirements of practical applications
The small mismatch of ionic radius between Ta5+, Zn2+ and Ti4+ indicates impurity phase is hard to formed, which is different from rare earth co-doped TiO2 ceramics[16,17,20,32]
Summary
With the continued development of microelectronics information technology, the colossal permittivity (CP) materials have received unprecedented attention[1,2,3]. Exploring for the material with high dielectric permittivity but acceptable dielectric loss and weak frequency/temperature dependence remains as a challenge. It has been found that (In, Nb) co-doped rutile TiO2 material has high dielectric constant (>104) and low dielectric loss(
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