Abstract
A colossal crystalline anisotropic magnetoresistance (CAMR) is observed in an epitaxial A-type antiferromagnetic Pr0.5Sr0.5MnO3 (PSMO) thin film, which is 1600% at 20 K under the magnetic field of 50 kOe. This colossal CAMR is associated with an anisotropic switching process between low and high resistivity states. Based on the symmetry of angular dependence of the CAMR, we attribute the origin to the strong anisotropic magnetostriction in PSMO. Our results explored a potential utilization of an A-type antiferromagnetic thin film for CAMR based spintronic devices.
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