Abstract
The values of BV/sub ceo/ are computed for transistors with highly doped collectors and with thin reach-through collectors, using various sets of ionization coefficients including new data. Computed values of BV/sub ceo/ are compared with experimental results. It is shown that transistors with thin reach-through collectors have higher current capability for any given BV/sub ceo/ compared to those with highly doped collectors. Tradeoffs in terms of BV/sub ceo/, maximum collector current and the maximum frequency of operation are studied for transistors with highly doped and thin reach-through collectors. >
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