Abstract
The collector electrical characteristics (I-V) of a transistor laser (TL) manifest directly the transport and recombination dynamics of the vital quantum-well (QW) base region, including as described here QW recombination state changes. By employing the continuity equations and an extension of the classic charge control model, we extract from the dc I-V characteristics the differential optical gain of a single QW TL showing the QW state changes. The results agree in form with calculations employing Fermi’s golden rule and the “staircaselike” density of states of a QW.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
