Coincidence Site Lattice (CSL) grain boundaries and Goss texture development in Fe-3% Si alloy

Abstract

The role of CSL grain boundaries in Goss [(100)〈100〉] texture development Fe-3% Si has been investigated by direct crystallographic orientation measurement of (1) primary recrystallized specimens and (2) specimens following the early stages of secondary recrystallization. Goss oriented grains in the primary matrix were found to occur with a low frequency, and were not observed to have an initial size advantage or occur in clusters; however, these grains were determined to be frequently bounded by low Σ (i.e. Σ3-29) CSL interfaces. By calculating the possible orientation relationships between hypothetical grain orientations and the experimentally determined texture of the primary matrix, Goss oriented grains were determined to be statistically more likely to produce mobile low Σ CSL orientation relationships during random growth through the primary matrix than other major grain texture components. A deficit of these CSL interfaces, relative to the determined probability of occurrence during random grain growth, was experimentally determined for interfaces bounding Goss grains following secondary recrystallization treatments; this deficit was rationalized on the basis of preferential replacement by general (or higher Σ) interfaces due to enhanced mobility of these low Σ CSL grain boundaries.